Temperature and chemical effects on the interfacial energy between a Ga–In–Sn eutectic liquid alloy and nanoscopic asperities

• Yujin Han,
• Pierre-Marie Thebault,
• Corentin Audes,
• Xuelin Wang,
• Haiwoong Park,
• Jian-Zhong Jiang and
• Arnaud Caron

Beilstein J. Nanotechnol. 2022, 13, 817–827, doi:10.3762/bjnano.13.72

• that these contributions arose from contamination by the ambient, we excluded them from our calculations of the surface chemical composition. Figure 6 shows that the surface oxide on the melt mainly consists of gallium and tin oxides, with a minor contribution from indium oxide. After heating at 100 °C

A chemiresistive sensor array based on polyaniline nanocomposites and machine learning classification

• Jiri Kroutil,
• Alexandr Laposa,
• Ali Ahmad,
• Jan Voves,
• Vojtech Povolny,
• Ladislav Klimsa,
• Marina Davydova and
• Miroslav Husak

Beilstein J. Nanotechnol. 2022, 13, 411–423, doi:10.3762/bjnano.13.34

• mg additives (zinc oxide, two forms of tungsten oxide, indium oxide, fullerene, NCD, and barium titanate) in 2 mL xylene. Table 3 shows properties of the used additives. The prepared solutions were mixed in a shaker for 30 min and subsequently ultrasonicated for 30 min. Finally, the obtained

Semitransparent Sb₂S₃ thin film solar cells by ultrasonic spray pyrolysis for use in solar windows

• Jako S. Eensalu,
• Atanas Katerski,
• Erki Kärber,
• Lothar Weinhardt,
• Monika Blum,
• Clemens Heske,
• Wanli Yang,
• Ilona Oja Acik and
• Malle Krunks

Beilstein J. Nanotechnol. 2019, 10, 2396–2409, doi:10.3762/bjnano.10.230

• chemical methods [20]. Until now, semitransparency aspects of Sb2S3 solar cells have only been studied by Zimmermann et al., who reported a PCE of 4.25% for a tin-doped indium oxide (ITO)/TiO2/Sb2S3/poly(3-hexylthiophene-2,5-diyl) (P3HT)/Ag solar cell with a 50–70 nm thick Sb2S3 absorber and a

Temperature-dependent Raman spectroscopy and sensor applications of PtSe₂ nanosheets synthesized by wet chemistry

• Mahendra S. Pawar and
• Dattatray J. Late

Beilstein J. Nanotechnol. 2019, 10, 467–474, doi:10.3762/bjnano.10.46

• device fabrication and testing Sensor devices were fabricated on a tin-doped indium oxide (ITO) substrate with a channel length of ≈300 µm and width ≈5 mm. The PtSe2 nanosheet powder was dispersed in N-methyl-2-pyrrolidone (NMP) solvent and then drop casted between the channels. The devices were further

Geometrical optimisation of core–shell nanowire arrays for enhanced absorption in thin crystalline silicon heterojunction solar cells

• Robin Vismara,
• Olindo Isabella,
• Andrea Ingenito,
• Fai Tong Si and
• Miro Zeman

Beilstein J. Nanotechnol. 2019, 10, 322–331, doi:10.3762/bjnano.10.31

• , a 100 nm thick transparent tin-doped indium oxide (In2O3:Sn, ITO) was deposited at low power and low temperature, using radio-frequency (RF) magnetron sputtering. The cell area was defined as 5 mm × 5 mm, using a mask during ITO deposition. The reported equivalent thickness values of thin films on

Uniform Sb₂S₃ optical coatings by chemical spray method

• Jako S. Eensalu,
• Atanas Katerski,
• Erki Kärber,
• Ilona Oja Acik,
• Arvo Mere and
• Malle Krunks

Beilstein J. Nanotechnol. 2019, 10, 198–210, doi:10.3762/bjnano.10.18

• 170 °C for 5 minutes. Such Sb2S3 optical coatings are very attractive for future application as low-cost absorber layers in solar cells. Experimental Materials Commercial 1.1 mm thick soda-lime glass coated with 150 nm 25 Ω∙sq−1 tin doped indium oxide (ITO) from ZSW was used as a substrate. The

Graphene-enhanced metal oxide gas sensors at room temperature: a review

• Dongjin Sun,
• Yifan Luo,
• Marc Debliquy and
• Chao Zhang

Beilstein J. Nanotechnol. 2018, 9, 2832–2844, doi:10.3762/bjnano.9.264

• achieved at all [19][20]. Metal-oxide semiconductors (MOS), including tin oxide (SnO2), titanium dioxide (TiO2), zinc oxide (ZnO), copper oxide (CuO), tungsten oxide (WO3), indium oxide (In2O3), ferric oxide (Fe2O3) and cobalt oxide (Co3O4) are important materials for gas sensors [21][22][23][24][25][26

Electrospun one-dimensional nanostructures: a new horizon for gas sensing materials

• Muhammad Imran,
• Nunzio Motta and
• Mahnaz Shafiei

Beilstein J. Nanotechnol. 2018, 9, 2128–2170, doi:10.3762/bjnano.9.202

• ], Co3O4 [113][114], iron oxide (Fe2O3) [115][116], tin dioxide (SnO2) [76][117][118][119][120][121][122][123], zinc oxide (ZnO) [124][125][126][127][128][129][130], and indium oxide (In2O3) [78][80][131][132][133][134][135][136][137][138]. Table S2 in Supporting Information File 1 summarizes the sensing

Enhanced detection of nitrogen dioxide via combined heating and pulsed UV operation of indium oxide nano-octahedra

• Oriol Gonzalez,
• Sergio Roso,
• Xavier Vilanova and
• Eduard Llobet

Beilstein J. Nanotechnol. 2016, 7, 1507–1518, doi:10.3762/bjnano.7.144

• the use of combined heating and pulsed UV light activation of indium oxide gas sensors for enhancing their performance in the detection of nitrogen dioxide in air. Indium oxide nano-octahedra were synthesized at high temperature (900 °C) via vapour-phase transport and screen-printed onto alumina

• light, which convey important information for the quantitative analysis of nitrogen dioxide. Keywords: dynamic gas sensing; indium oxide; nitrogen dioxide; pulsed UV light; UV-activated metal oxide; Introduction Technological barriers related to sensor performance and power consumption are currently

• been found to be highly sensitive to nitrogen dioxide levels in air [6][7] and there are commercially available metal oxide NO2 sensors [8]. In particular, many authors have reported nanostructured indium oxide as a promising material for the sensitive detection of nitrogen dioxide at trace levels in

Ammonia gas sensors based on In₂O₃/PANI hetero-nanofibers operating at room temperature

• Qingxin Nie,
• Zengyuan Pang,
• Hangyi Lu,
• Yibing Cai and
• Qufu Wei

Beilstein J. Nanotechnol. 2016, 7, 1312–1321, doi:10.3762/bjnano.7.122

• electrospinning, and then hollow structure indium oxide (In2O3) nanofibers were obtained through calcination with PVP as template material. In situ polymerization was used to prepare indium oxide/polyaniline (In2O3/PANI) composite nanofibers with different mass ratios of In2O3 to aniline. The structure and

• ] and WO3 [12] have been reported. Indium oxide (In2O3) is an n-type semiconductor with a band gap of approximately 3.55–3.75 eV, which has been widely used due to its excellent electrical and optical properties. In2O3 also exhibits sensitivity to various vapors and gases, such as NO2 [13], CO [14], H2

Influence of wide band gap oxide substrates on the photoelectrochemical properties and structural disorder of CdS nanoparticles grown by the successive ionic layer adsorption and reaction (SILAR) method

• Mikalai V. Malashchonak,
• Alexander V. Mazanik,
• Olga V. Korolik,
• Еugene А. Streltsov and
• Anatoly I. Kulak

Beilstein J. Nanotechnol. 2015, 6, 2252–2262, doi:10.3762/bjnano.6.231

• of N due to the stress relaxation. The CdS LO band width for In2O3/CdS films is larger than for TiO2/CdS, which corresponds with the results of the photoelectrochemical measurements demonstrating a larger Urbach energy for the nanoparticles synthesized on the surface of indium oxide. The spectral

A single-source precursor route to anisotropic halogen-doped zinc oxide particles as a promising candidate for new transparent conducting oxide materials

• Daniela Lehr,
• Markus R. Wagner,
• Johanna Flock,
• Julian S. Reparaz,
• Clivia M. Sotomayor Torres,
• Alexander Klaiber,
• Thomas Dekorsy and
• Sebastian Polarz

Beilstein J. Nanotechnol. 2015, 6, 2161–2172, doi:10.3762/bjnano.6.222

• transparency over the entire visible light range. A solid solution of indium oxide and substantial amounts of tin oxide for electronic doping (ITO) is currently the most prominent example for the class of so-called TCOs (transparent conducting oxides). Due to the limited, natural occurrence of indium and its

• semiconductor material, and substantial chemical doping leads to a sufficient amount of mobile charge carriers. The best-known example for TCOs is indium tin oxide (ITO) [4]. ITO can be characterized as a tin-doped indium oxide material with up to 90% content of In2O3. It is characterized by a low specific

Photoelectrochemical and Raman characterization of In₂O₃ mesoporous films sensitized by CdS nanoparticles

• Mikalai V. Malashchonak,
• Sergey K. Poznyak,
• Eugene A. Streltsov,
• Anatoly I. Kulak,
• Olga V. Korolik and
• Alexander V. Mazanik

Beilstein J. Nanotechnol. 2013, 4, 255–261, doi:10.3762/bjnano.4.27

• . Keywords: cadmium sulfide (CdS); indium oxide (In2O3); nanoparticles; successive ionic layer adsorption and reaction (SILAR); Introduction In third-generation solar cells molecular dyes (in the Grätzel cells [1]) as well as nanoparticles of semiconducting metal chalcogenides (CdS, CdSe, CdTe, PbS, PbSe

• comparison to TiO2, In2O3 possesses higher electron affinity [12] allowing the use of sensitizers with a smaller bandgap Eg = ELUMO – EHOMO. Besides, indium oxide is characterized by an essentially higher (by an order of magnitude) lifetime of the injected photoelectrons [12]. Interest in a more profound

• thoroughly washed and ultrasonically treated after the addition of a small amount of nitric acid as a stabilizer to obtain a stable sol at a concentration of 120 g/L. To prepare indium oxide In2O3(400) films with mesoporous structure, block-copolymer Pluronic F127 (100 g/L) as a template material was added